MEARS Silicon Technology (MST™) meets the critical challenges facing the silicon semiconductor industry by delivering both significantly reduced gate leakage and enhanced transistor performance.

The MST™ Platform is a band engineering approach based on extensive fundamental work and an understanding of the quantum mechanics of modern deep-submicron devices.  MST™ is designed to be fully compatible with customers’ standard, strained silicon and silicon-on-insulator (SOI) baseline CMOS processes.

MST™ provides a channel replacement solution incorporating a silicon laminate (silicon super-lattice) layer.  As a Silicon-on-Silicon solution, MST™ introduces no new materials to the fabrication process.  The benefits result from the intrinsic properties of the replacement channel.  The silicon “laminate” creates a “superhighway” effect for driving current, while reducing gate leakage.

MST™ High Performance, MST™ High Current and MST™ Low Power are the first set of solutions that will be offered to the industry based on the MST™ Platform.